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DUP412VP5
Thermal Characteristics
Characteristic
Peak Power Dissipation, 8x20 μ S Waveform (Note 5)
Thermal Resistance, Junction-to-Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P pk
R θ JA
T J, T STG
Value
18
417
-55 to +150
Unit
W
°C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Breakdown Voltage
Leakage Current
Capacitance @0V Bias(pF)
Capacitance @3V Bias(pF)
Type
Number
DUP412VP5
Marking
Code
V1
(Note 6)
V BR @ I T = 5mA
Min (V) Nom (V) Max (V)
11.4 12 12.7
(Note 6)
I RM @ V RM
Max( μ A)
(V)
0.5 9.0
(Note 7)
C T
Typ Max
6.5 10
(Note 7)
C T
Typ Max
3.5 5
Notes:
4. Non-repetitive current pulse per Figure 2 and derate above T A = 25°C per Figure 1.
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Per element, f = 1MHz, T A = 25 ° C
100
100
75
50
50
25
0
0
25
50 75 100 125 150 175
T A , AMBIENT TEMPERATURE (°C)
Fig. 1 Pulse Derating Curve
200
0
0
20 40
t, TIME ( μ s)
Fig. 2 Pulse Waveform
60
1
10
V R = 9V
8
0.1
6
0.01
4
0.001
2
0.0001
0
0.4 0.6 0.8 1.0 1.2
V F , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3 Typical Forward Characteristics
-50
-25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 4 Instantaneous Reverse Current
vs. Ambient Temperature
DUP412VP5
Document number: DS31642 Rev. 8 - 2
2 of 4
www.diodes.com
January 2011
? Diodes Incorporated
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